BSO203PNTMA1 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

BSO203PNTMA1

Description:

MOSFET 2P-CH 20V 8.2A 8SOIC

Stock:

6333

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

8.2A

Drain source voltage (Vdss)

20V

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

48.6nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

2242pF @ 15V

On resistance (maximum) for different Ids and Vgs

21 mΩ @ 8.2A,4.5V

Power - maximum

Vgs (th) (maximum) for different Ids

1.2V @ 100µA

packing

TR,CT

series

OptiMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

BSO203PNTMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6333,Price reference "real-time change" China/Hongkong。 BSO203PNTMA1 package/specs, Download BSO203PNTMA1、Datasheet。